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| IRIS-A6331 Features * Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. * Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. * Low start-up circuit current (50uA max) * Built-in Active Low-Pass Filter for stabilizing the operation in case of light load * Avalanche energy guaranteed MOSFET with high VDSS * The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. * No VDSS de-rating is required. * Built-in constant voltage drive circuit * Various kinds of protection functions * Pulse-by-pulse Overcurrent Protection (OCP) * Overvoltage Protection with latch mode (OVP) * Thermal Shutdown with latch mode (TSD) INTEGRATED SWITCHER Package Outline 8 Lead PDIP Key Specifications Type MOSFET VDSS(V) 500 RDS(ON) MAX 3.95 ACinput(V) 100/12015% Pout(W) Note 1 10 Descriptions IRIS-A6331 IRIS-A6331 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-A6331 1 2 3 4 8 7 6 5 www.irf.com 1 IRIS-A6331 Absolute Maximum Ratings (Ta=25) (Refer Gnd 2 and 5) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak IDMAX Definition Drain Current *1 Maximum switching current *5 Terminals Max. Ratings 8 3.54 8 3.54 Units A A EAS Vin Vth PD1 PD2 TF Top Tstg Tch Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature 8-1 3-2 4-2 8-1 3-2 - 32 35 6 1.35 0.14 -20 ~ +125 -20 ~ +125 -40 ~ +125 150 mJ V V W W Note Single Pulse V1-2=0.82V Ta=-20~+125 Single Pulse VDD=99V,L=20mH IL=2.1A *6 Specified by VinxIin Refer to recommended operating temperature *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. *6 When embedding this hybrid IC onto the printed circuit board (board size 15mmx15mm) Fig.1 V1-2 www.irf.com 2 IRIS-A6331 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25, Vin=20V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Vth IOCP/FB Vin(OVP) Definition Operation start voltage Operation stop voltage *7 Circuit current in operation Circuit current in non-operation Maximum OFF time O.C.P/F.B Pin threshold voltage O.C.P/F.B Pin extraction current O.V.P operation voltage MIN 15.8 9.1 12 0.7 0.7 23.2 7.9 135 Ratings TYP 17.6 10.1 15 0.76 0.8 25.5 - MAX 19.4 11.1 5 50 18 0.82 0.9 27.8 70 10.5 - Units V V mA A sec V mA V A V Test Conditions Vin=019.4V Vin=19.49.1V Vin=15V Vin=027.8V Vin=27.8 (Vin(OFF)-0.3)V Vin=27.87.9V Iin(H) Latch circuit sustaining current *8 Vin(La.OFF) Latch circuit release voltage *7,8 Tj(TSD) Thermal shutdown operating temperature - *7 The relation of Vin(OFF)Vin(La.OFF) is applied for each product. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25) unless otherwise specified Symbol VDSS IDSS Definition Drain-to-Source breakdown voltage Drain leakage current MIN 500 *9 - Ratings TYP - MAX 300 3.95 250 52 Units V A nsec /W Test Conditions ID=300A V2- 1=0V(short) VDS =500V V2- 1=0V(short) V3- 2=10V ID=0.4A RDS(ON) On-resistance tf Switching time ch-F Thermal resistance Between channel and internal frame *9 Internal frame temperature (TF) is measured at the root of the Pin 5. www.irf.com 3 IRIS-A6331 IRIS-A6331 A.S.O. temperature derating coefficient curve 100 IRIS-A6331 MOSFET A.S.O. Curve 100 A.S.O. temperature derating coefficient[%] 80 Drain Current ID[A] 10 Drain current limit by ON resistance 0.1ms 60 1 1ms 40 20 0.1 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0 0 20 40 60 80 100 120 0.01 1 10 100 1000 Drain-to-Source Voltage VDS[V] Internal frame temperature TF [ ] IRIS-A6331 Maximum Switching current derating curve Ta= 20+125 4 100 IRIS-A6331 Avalanche energy derating curve Maximum Switchng Current IDMAX[A] 3 EAS temperature derating coefficient [%] 0.8 0.9 1 V 1-2 [V] 1.1 1.2 80 60 2 40 1 20 0 0 25 50 75 100 ] 125 150 Channel temperature Tch [ www.irf.com 4 IRIS-A6331 IRIS-A6331 TF-PD2 Curve for Control IC 0.16 IRIS-A6331 MOSFET Ta-PD1 Curve 1.6 1.4 1.2 Power dissipation PD1[W] 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta[ ] PD1=1.35[W] PD2=0.14[W] 0.14 0.12 Power dissipation PD2[W] 0.1 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 120 140 Internal frame temperature TF[ ] IRIS-A6331 Transient thermal resistance curve 10 Transient thermal resistance ch-a[ /W] 1 0.1 0.01 1 10 100 time t [sec] 1m 10m 100m www.irf.com 5 IRIS-A6331 Block Diagram 3 Vin OVP UVLO REG Latch Internal Bias Delay TSD REG 7,8 D PWM OSC Latch SQ R Drive 1 S OCP Comp. Icont 4 OCP/FB 2,5 GND Lead Assignments Pin Assignment (Top View) Source GND Vin OCP/FB 1 2 3 4 8 7 6 5 Drain Drain N.C. GND Pin No. 1 2 3 4 5 6 7 Symbol S GND Vin OCP/FB GND N.C. D Description Source Pin Ground Pin Power supply Pin Overcurrent / Feedback Pin Ground Pin Drain Pin Function MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Ground Not Connected MOSFET drain Other Functions O.V.P. - Overvoltage Protection Circuit T.S.D. - Thermal Shutdown Circuit www.irf.com 6 IRIS-A6331 Case Outline a. Type Number b. Lot Number 1st letterThe last digit of year 2nd letterMonth (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd letterWeek 13 : Arabic numerals c. Registration Number 8 7 6 5 A6331 R I 1 2 3 4 a b c Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com 7 |
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